| 摘要 |
A semiconductor memory device is divided into a core region where memory cells are formed and a peripheral region where an input/output line circuit is formed. The input/output line circuit of the semiconductor memory device is operable without affecting other external devices and being affected by noise from other external devices along with improved power dissipation. The semiconductor memory device includes: a core voltage generator for supplying a core voltage to the core region as a driving voltage; an internal voltage generator for supplying an internal voltage to the peripheral region as a driving voltage; and a line voltage generator for supplying a line voltage to the input/output line circuit as a driving voltage. In this manner, a stable supply of the driving voltage is achieved.
|
