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发明名称
半导体记忆装置
摘要
一种半导体记忆体装置,其包括:一码通道,其用于基于一自一外部源输入之码控制讯号而输出复数个码讯号;一终端电阻器解码器,其用于解码一晶片选择讯号、一内建晶片终端电阻(on die termination;ODT)控制讯号及该复数个码讯号,并基于经解码之讯号而输出复数个选择讯号;及一ODT区块,其用于使一输出资料垫具备回应该复数个选择讯号而选择的一终端电阻器之阻抗。
申请公布号
TW200713324
申请公布日期
2007.04.01
申请号
TW095123984
申请日期
2006.06.30
申请人
海力士半导体股份有限公司
发明人
金容琪;金敬勋
分类号
G11C8/00(2006.01)
主分类号
G11C8/00(2006.01)
代理机构
代理人
陈长文
主权项
地址
韩国
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