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发明名称
硫化处理应变式砷化铝铟/砷化镓铟异质接面场效应电晶体(MHEMT)之方法
摘要
本发明系一种硫化处理应变式砷化铝铟/砷化镓铟异质接面场效应电晶体(MHEMT)之方法,其系利用硫化处理应用在应变式砷化铝铟/砷化镓铟异质接面场效应电晶体(MHEMT)元件,做闸极的钝化处理,使启始电压提升,表面漏电流减少,表面状态密度也增强,使其能运用在高电流密度和高输入功率范围。
申请公布号
TW200713463
申请公布日期
2007.04.01
申请号
TW095141204
申请日期
2006.11.07
申请人
长庚大学
发明人
邱显钦;张连璧;黄元昌;陈重文;李纬宪
分类号
H01L21/335(2006.01)
主分类号
H01L21/335(2006.01)
代理机构
代理人
主权项
地址
桃园县龟山乡文化一路259号
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