| 摘要 |
IN A NITRIDE SEMICONDUCTOR DEVICE HAVING AN ACTIVE LAYER (12) BETWEEN A FIRST ELECTRICALLY CONDUCTIVE TYPR OF LAYER AND A SECOND ELECTRICALLY CONDUCTIVE TYPE OF LAYER, A QUANTUM WELL STRUCTURE IS ADOPTED IN WHICH AN ACTIVE LAYER (12) HAS AT LEAST A WELL LAYER (11) FORMED OF A NITRIDE SEMICONDUCTOR CONTAINING IN AND A1 AND A BARRIER LAYER (2) FORMED OF A NITRIDE SEMICONDUCTOR CONTAINING A1, WHEREBY A LASER DEVICE EXCELLENT IN EMITTING EFFICACY AT A SHORT WAVELENGTH REGION IS OBTAINED. IT IS PARTICULARLY PREFERABLY THAT SAID WELL LAYER (1) IS FORMED OF A1xINyGA1-x-yN (0 <x<1<0<y<1,x + y < 1) AND SAID BARRIER LAYER (2) IS FORMED OF A1uInvGA1-u-yN (0<u,1,0<1,u +v < 1).SUCH A LIGHT EMITTING DEVICE IS REALIZED TO OBTAIN EXCELLENT EFFICACY IN EMITTING LIGHT OF SHORT WAVELENGTH IN A REGION OF 380 nm.(FIG 1) |
