| 摘要 |
A method for forming a contact of a semiconductor device is provided to reduce fabrication costs and to prevent the distortion and damage of a contact hole by removing a surface oxide layer using an etching process under SF6 or CF4 and Ar gas conditions. An interlayer dielectric is formed on a semiconductor substrate. An etch mask is formed on the interlayer dielectric. A contact hole is formed on the resultant structure by etching selectively the interlayer dielectric using the etch mask. The etch mask is removed therefrom. An etching process is performed on the resultant structure under SF6 or CF4 and Ar gas conditions by using in-situ processing. At this time, a surface oxide layer is removed from a titanium nitride layer and a barrier layer is formed thereon, wherein the titanium nitride layer is exposed to the outside through the contact hole. A conductive layer is filled in the contact hole. A planarizing process is performed on the conductive layer.
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