| 摘要 |
<p>An MOSFET(Metal Oxide Semiconductor Field Effect Transistor) is provided to restrain remarkably a subthreshold swing by using a moat pattern containing an MIT(Metal-Insulator Transition) material. An MOSFET includes a first electrode(15) on a substrate(11), a second electrode(16) spaced apart from the first electrode, a channel region between the first and the second electrodes, an insulated gate electrode, and a moat pattern. The insulated gate electrode(19) faces the channel region. The moat pattern(17) is arranged between the channel region and the second electrode. The moat pattern contains an MIT material. The first and the second electrodes are source and drain, respectively.</p> |
