| 摘要 |
A plasma processor chamber includes a bottom electrode (13) and a top electrode assembly (14) having a center electrode (16,36) surrounded by a grounded electrode (34,42). RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground. |
