| 摘要 |
<p>A phase shift mask and a manufacturing method thereof are provided to improve a process margin and to obtain easily a fine pattern by improving the resolution. A multiple thin film structure(24) is formed on a substrate(21). The multiple thin film structure has a predetermined groove with a predetermined depth. An absorbing body(25) is partially filled in the predetermined groove. The multiple thin film structure is composed of lower and upper films, wherein the lower and upper films are alternately stacked with each other. A first thickness of the lower film is 2.8 nm and a second thickness of the upper film is 4.2 nm.</p> |
