发明名称 OH and H resistant twin crystal structures of silicon and tellurium
摘要 A method of forming a single crystalline structure of two substances is disclosed, which comprises: inserting the two substances into a substantially spherical crucible, wherein a first one of the substances is silicon-based; sealing the crucible in a substantially spherical envelope; heating the two substances in an oven at a temperature and time sufficient to create a single crystalline material of the two substances, wherein the single crystalline structure is a twin crystal structure and the preferred other substance is tellurium. These single crystalline structures have a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, and are suitable for use as an optical media or a barrier coating; these crystalline structures provide a maximum obtainable optical transmission with zero attenuation and have no intrinsic material absorption.
申请公布号 NZ537551(A) 申请公布日期 2007.03.30
申请号 NZ20020537551 申请日期 2002.10.08
申请人 CZT INC 发明人 CURATOLO, SUSANA
分类号 C23C14/24;C30B1/00;C30B1/12;C30B9/00;C30B11/00;F27B5/04;F27B14/04 主分类号 C23C14/24
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