| 摘要 |
A CMOS image sensor is provided to enhance considerably a fill-factor, to restrain the generation of failures, and to reduce the area of a unit pixel. A CMOS image sensor comprises a plurality of unit pixels and a drive transistor. The plurality of unit pixels include a photodiode, a select transistor for transferring the electric charge stored in the photodiode, and a reset transistor for resetting the photodiode via the select transistor, respectively. The drive transistor is connected with the plurality of unit pixels, so that the electric charge transferred from the select transistor of each unit pixel is applied to a gate of the drive transistor.
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