| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical type light emitting diode at a reduced cost by reinforcing an operation reliability of a device and improving a production yield, and a method for manufacturing it. <P>SOLUTION: This method comprises following steps. A sapphire substrate 200 is prepared. A light emitting epitaxial structure 202 is formed on the sapphire substrate 200. Then a first conductive type electrode 204 is formed on the surface of the light emitting epitaxial structure 202. Then, a local removing step is performed to remove a part of the sapphire substrate from the surface of the light emitting epitaxial structure 202 so that a part of the surface is exposed. Then a second conductive type electrode 210 is formed on the exposed part of the surface of the light emitting epitaxial structure 202. The conductive type of the first conductive type electrode 204 is opposite to that of the second conductive type electrode 210. <P>COPYRIGHT: (C)2007,JPO&INPIT |
