| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride-based semiconductor light-emitting element which is reduced in warpage after being peeled off from a substrate and can efficiently extract light from a side face. <P>SOLUTION: The nitride-based semiconductor light-emitting element A is provided with a light-emitting element section 5 in which at least an n-type semiconductor layer 13, a light-emitting layer 14 and a p-type semiconductor layer 15 are laminated. In this element A, a translucent insulated portion 6 is formed around the element section 5. <P>COPYRIGHT: (C)2007,JPO&INPIT |
