| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pH sensor or the like using hydrogen terminal diamond of high quality which utilizes characteristics such as (1) pH sensitivity shown by diamond, (2) the extremely chemical inactivity of diamond or the like. <P>SOLUTION: The pH sensor is composed of ISFET, wherein the surface of a diamond semiconductor of high quality is terminated by hydrogen, and a reference electrode. The diamond semiconductor of high quality is grown on a diamond substrate by microwave exciting plasma chemical phase synthesis and hydrogen terminal treatment is subsequently applied to the surface of the diamond semiconductor of high quality after growing to form a drain source electrode on the diamond substrate subjected to hydrogen termination treatment. <P>COPYRIGHT: (C)2007,JPO&INPIT |
