| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of reducing a peripheral circuit area while scaling of a memory cell. <P>SOLUTION: This device includes: a float gate; a plurality of memory cells arranged in a matrix; a first diode connected between the drain and the ground terminal of the plurality of memory cells; and a second diode connected between the source and the ground terminal of the plurality of memory cells. The first and second diodes have the same temperature characteristics. The first and second diodes are parasitic diodes, zener diodes or elements having avalanche breakdown voltages. <P>COPYRIGHT: (C)2007,JPO&INPIT |
