| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal, especially a high melting oxide crystal, which does not have growth strips, especially the growth strips with a fishtail pattern, or which does not have the growth strips to a troublesome extent. SOLUTION: This method for making a highly uniform low-stress single crystal in a predetermined orientation comprises (a) dipping a single crystal, kept at a temperature equal to or below the melting point of a crystal raw material, in a melt so as to form a solid-liquid phase boundary surface, (b) pulling the single crystal, dipped in the melt in the process (a), out of the melt vertically relative to the melt surface in order to grow the single crystal in the predetermined crystal orientation, (c) removing heat away while pulling the single crystal out of the melt in the process (b), (d) rotating the single crystal and the melt relative to each other with a controllable rotation speed in the process (b), (e) detecting at least one characteristic surface temperature in an interior of a crucible, and (f) when fluctuations in the at least one characteristic surface temperature are detected, controlling the at least one characteristic surface temperature by increasing or decreasing the rotation speed in order to adjust the phase boundary surface between the single crystal and the melt so that it is planar. COPYRIGHT: (C)2007,JPO&INPIT |
