发明名称 SUBSTRATE HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate heat treatment apparatus capable of performing heat treatment while providing a temperature gradient precisely between the center and the peripheral section of a substrate. SOLUTION: When the substrate W on a heat treatment plate 1 comes into contact with a center support member 5, a peripheral support member 7, and a lip 19, a minute space formed between the substrate W and the heat treatment plate 1 becomes airtight. By discharging gas in the minute space in this state, the substrate W is sucked to the upper surface side of the heat treatment plate 1. In this case, by displacing a piezoelectric element 11 downward finely, the central support member 5 is lowered, thus curving the center of the substrate W so that it approaches the upper surface side of the heat-treatment plate 1 and thereby reducing a gap at the center of the substrate W as compared with that at the peripheral section. As a result, when heat-treating the substrate W, a temperature gradient according to the gap difference can be given. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007080935(A) 申请公布日期 2007.03.29
申请号 JP20050263653 申请日期 2005.09.12
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 HAMADA TETSUYA
分类号 H01L21/324;H01L21/02;H01L21/683 主分类号 H01L21/324
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