| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve transmission characteristics for high-frequency signals in a high-frequency semiconductor device having a decoupling capacitor by further reducing a packaging area as well as shortening a wire length accordingly. <P>SOLUTION: A ground plane 5 is prepared on an insulating film 3 provided on a silicon substrate 1 by connecting it to a connection pad 2b on the silicon substrate 1, a dielectric film 11 for a decoupling capacitor is prepared in an opening 9 of a protective coat 7 provided on the ground plane 5 by connecting it to a lower electrode composed of a portion of the ground plane 5, a primary upper wire 12 for high-frequency signals is prepared on the protective film 7 including the dielectric film 11 by connecting it to the connection pad 2a on the silicon substrate 1, and the electrically connected wire is mainly in the thickness of a direction of the silicon substrate 1 by preparing an upper electrode 15 halfway through a first upper wire 12 on the dielectric film 11, thereby further reducing the packaging area and shortening the wire length accordingly. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
