METHOD FOR CONTROLLING TEMPERATURE OF THERMAL PROCESS, METHOD OF THERMAL PROCESS OF SUBSTRATE AND DEVICE OF THERMAL PROCESS OF SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a temperature control method, a method of thermal process of a semiconductor substrate and a device of thermal process which can improve a uniformity of the in-plane temperature of the substrate during a rapid thermal process using lamp heating. SOLUTION: In the first place, calibration data are acquired in temperature measuring positions on the substrate by associating the thickness of an oxide film formed by thermal process and the set temperature of thermal process. In the second place, the thickness of the oxide film which is formed on the substrate is measured in the temperature measuring positions on the substrate which is subjected to thermal process at a specific set temperature of thermal process. Then set temperature T of thermal process corresponding to the measured thickness of the oxide film and set temperature Tm' of thermal process corresponding to the thickness of the oxide film which should be acquired at the specific set temperature of thermal process are acquired from the calibration data. Temperature correction values of temperature probes are acquired according to these temperature differences. COPYRIGHT: (C)2007,JPO&INPIT