发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes: a first element region and a second element region formed on a substrate to be adjacent to each other with an isolation region interposed therebetween; a first gate insulating film formed on the first element region; a second gate insulating film formed on the second element region; and a gate electrode continuously formed on the first gate insulating film, the isolation region and the second gate insulating film. The gate electrode includes a first silicided region formed to come into contact with the first gate insulating film, a second silicided region which is formed to come into contact with the second gate insulating film and is of a different composition from the first silicided region, and a conductive anti-diffusion region composed of a non-silicided region formed in a part of the gate electrode located on the isolation region and between the first element region and the second element region.
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申请公布号 |
US2007069304(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20060450349 |
申请日期 |
2006.06.12 |
申请人 |
AIDA KAZUHIKO;HIRASE JUNJI;SEBE AKIO;KOTANI NAOKI;TAKEOKA SHINJI;OKAZAKI GEN |
发明人 |
AIDA KAZUHIKO;HIRASE JUNJI;SEBE AKIO;KOTANI NAOKI;TAKEOKA SHINJI;OKAZAKI GEN |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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