| 摘要 |
Various aspects related to a method of reading a non-volatile memory cell adapted to store a first bit and a second bit. Various method embodiments comprise reading the first bit, including applying a first voltage level to a first node of the memory cell and a second voltage level to a second node of the memory cell, and further comprise reading the second bit, including applying the first voltage level to the second node and applying the second voltage level to the first node.
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