METHOD OF MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing nitride-based semiconductor light-emitting elements which is reduced in warpage after being peeled off from a substrate and can efficiently extract light from a side face.

SOLUTION: The method of manufacturing a plurality of nitride-based semiconductor light-emitting elements 2 is provided with a process of laminating at least an n-type semiconductor layer 103, a light-emitting layer 104 and a p-type semiconductor layer 105 in this order on a substrate 101 to form a laminate; a process of dividing the laminate so as to correspond to each of the elements 2 on which the laminate is manufactured by forming grooves 4 on the substrate 101; a process of filling each of the grooves 4 with a sacrificial layer 106; and a plating process of forming a plated substrate 111 by a plating method on the p-type semiconductor layer 105 and the sacrificial layer 106.

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