发明名称 Semiconductor device
摘要 A substrate is provided with a first wiring layer 111 , an interlayer insulating film 132 on the first wiring layer 111 , a hole 112 A formed in the interlayer insulating film, a first metal layer 112 covering the hole 112 A , a second metal layer 113 formed in the hole 112 A , a dielectric insulating film 135 on the first metal layer 112 , and second wiring layers 114 - 116 on the dielectric insulating film 135 , wherein the first metal layer 112 constitutes at least part of the lower electrode, an area, facing the lower electrode, of the second wiring layers 114 - 116 constitutes the upper electrode, and a capacitor 160 is constructed of the lower electrode, the dielectric insulating film 135 and the upper electrode P 1.
申请公布号 US2007069384(A1) 申请公布日期 2007.03.29
申请号 US20060339701 申请日期 2006.01.26
申请人 FUJITSU LIMITED 发明人 WATANABE KENICHI
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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