发明名称 |
MEMORY DEVICE WITH IMPROVED PERFORMANCE AND METHOD OF MANUFACTURING SUCH A MEMORY DEVICE |
摘要 |
Non-volatile memory device on a semiconductor substrate, comprising a semiconductor base layer, a charge storage layer stack, and a control gate; the base layer comprising source and drain regions and a current-carrying channel region being positioned in between the source and drain regions; the charge storage layer stack comprising a first insulating layer, a charge trapping layer and a second insulating layer, the first insulating layer being positioned above the current-carrying channel region, the charge trapping layer being above the first insulating layer and the second insulating layer being above the charge trapping layer; the control gate being positioned above the charge storage layer stack; the charge storage layer stack being arranged for trapping charge in the charge trapping layer by direct tunneling of charge carriers from the current-carrying channel region through the first insulating layer, wherein the current-carrying channel region is a p-type channel for p-type charge carriers, and the material of at least one of the current-carrying channel region and/or the source and drain regions is in an elastically strained state. |
申请公布号 |
WO2007034376(A2) |
申请公布日期 |
2007.03.29 |
申请号 |
WO2006IB53262 |
申请日期 |
2006.09.13 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;VAN SCHAIJK, ROBERTUS, T., F.;GARCIA TELLO, PABLO;SLOTBOOM, MICHIEL |
发明人 |
VAN SCHAIJK, ROBERTUS, T., F.;GARCIA TELLO, PABLO;SLOTBOOM, MICHIEL |
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