| 摘要 |
The invention concerns an electroplating composition in particular for coating a barrier layer for copper diffusion in the manufacture of interconnects for integrated circuits. The invention is characterized in that said composition comprises dissolved in a solvent: a source of copper ions, in a concentration ranging between 0.4 and 40 mM; at least one copper complexing agent selected from the group consisting of primary aliphatic amines, secondary aliphatic amines, tertiary aliphatic amines, aromatic amines, nitrogen-containing heterocycles and oximes; the mol ratio between the copper and the complexing agent(s) ranging between 0.1 and 2.5, preferably between 0.3 and 1.3; the pH of said composition being less than 7, preferably ranging between 3.5 and 6.5. |
