| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a function as a monitor tool, capable of rewriting stored information by trimming resistance inside a storage cell in storing the information using a pair of the storage cells, and easily detecting, variation in an element formation process and failure of a device after the element formation process is completed. <P>SOLUTION: The device is equipped with a cell array 10 in which storage cells 11, each configured with a MOS transistor 12 and a resistor 13 serially connected, is arranged in a matrix shape; a word line WLi connected to a gate of the MOS transistor 12 of the storage cell 11 in the same row of the cell array; a plurality of bit lines BLj arranged corresponding to each of the columns of the cell array and connected to one end of the resistor 13 of the storage cell of the same columns in common, respectively; and a signal difference determination circuit 14 for determining the stored information in the pair of the storage cells by comparing two output signals read in the two bit lines from the pair of the storage cells comprising each of one storage cell for the two columns among the cell arrays. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
