| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which malfunction immediately after the occurrence of suspension can be prevented. <P>SOLUTION: The semiconductor memory has a burst read-out function in which memory data read out from memory elements arranged in the matrix state are output continuously to the outside synchronizing with an external clock based on a head address input from the outside. The memory is provided with a buffer circuit in which a clock enable signal is disabled synchronizing with the first internal clock after an output enable signal is changed, and burst-output memory data are held. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
