| 摘要 |
A semiconductor memory device controls the voltage level of an equalization signal to be a boost voltage VPP for a predetermined time period and then to be an external power supply voltage VDD, when the equalization signal is repeated by a repeater. In order to improve bit line precharging performance of the bit line precharge portion enabled by the equalization signal, a rising interval of the equalization signal is activated as the boost voltage. Precharging is then performed with the external supply voltage after a predetermined time period. Thus, a thin gate insulating membrane can be used in a transistor in the bit line precharge portion which receives the equalization signal can be formed.
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