发明名称 |
Method of fabricating strained-silicon transistors and strained-silicon CMOS transistors |
摘要 |
A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate contains a gate structure thereon; performing an etching process to form two recesses corresponding to the gate structure within the semiconductor substrate; performing an oxygen flush on the semiconductor substrate; performing a cleaning process on the semiconductor substrate; and performing a selective epitaxial growth (SEG) to form an epitaxial layer in each recess for forming a source/drain region.
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申请公布号 |
US2007072353(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20050162798 |
申请日期 |
2005.09.23 |
申请人 |
WU CHIH-NING;TAI HSIN;LEE CHUNG-JU;SHIAU WEI-TSUN |
发明人 |
WU CHIH-NING;TAI HSIN;LEE CHUNG - JU;SHIAU WEI-TSUN |
分类号 |
H01L21/8234;H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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