| 摘要 |
The invention provides a novel structure of a phase change memory device. In the phase change memory device of the invention, an electrode acting as a radiating fin does not exit immediately above a phase change area of a phase change layer ( 115 ). A heater electrode ( 111 ) and landing electrode layer ( 113 a, 114 a) both contact the bottom of the phase change layer ( 115 ) made of GST. The landing electrode layer ( 113 a, 114 a) contacts the bottom of the phase change layer (115) to partially overlap in a region off from a portion immediately above the contact face (Y) of the phase change layer and heater electrode. The contact electrode ( 116, 118 ) is directly connected to the landing electrode layer ( 113 a, 114 a) in a portion off from a portion immediately above the heater electrode ( 111 ). The phase change layer of GST or the like does not exist immediately below the contact electrode.
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