| 摘要 |
A temperature sensing circuit of a semiconductor memory device is provided to detect the difference between a current temperature and a reference temperature by comparing the periods of a temperature compensation refresh period signal and a mode register period signal. A temperature sensing circuit of a semiconductor memory device includes a pulse generator(100), a comparison controller(200), an oscillator(300), and an output unit(600). The pulse generator is enabled by an output enable signal and outputs pulse signals every time period. The comparison controller is initialized by a power up signal, receives the pulse signal to generate a comparison control signal, compares the periods of first and second signals with each other, and outputs first and second period comparison signals. The oscillator outputs the first and second signals, when the comparison control signal is enabled. The output unit is initialized by the power up signal, receives the first and second period comparison signals, and outputs a temperature sensing signal for comparing the current temperature with a reference temperature.
|
