| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a programming method capable of shortening programming time in a NAND type flash memory having a multi-plane structure. <P>SOLUTION: Data are sequentially loaded into the page buffers of N planes. In this case, immediately after the loading of data into the page buffer of each plane is finished, the data loaded into the page buffer is programmed in the page of the selected memory cell block of the plane, and data loading into the page buffer of a next plane is started. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
