| 摘要 |
PROBLEM TO BE SOLVED: To provide a development processing method of a substrate, with which resist pattern collapse due to thinning of a pattern size and a problem by water repellence of resist, which occurs in relation to technical progress for thinning the pattern size, can be solved and device structure and control are prevented from becoming complicated. SOLUTION: Before developer is discharged onto an exposed resist film formed on a surface of the substrate W from a developer discharge nozzle 28, and the resist film is developed; solution comprising surfactant is discharged onto the resist film from a liquid discharge nozzle 30 as pre-wetting liquid, and a pre-wetting processing is performed. Same solution comprising surfactant is discharged onto the resist film from the liquid discharge nozzle 30 as rinse liquid after a development processing and a rinse processing is performed. COPYRIGHT: (C)2007,JPO&INPIT |
