| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride-based semiconductor device capable of reducing the contact resistance between the nitrogen face of a nitride-based semiconductor substrate, or the like and an electrode. SOLUTION: The manufacturing method of the nitride-based semiconductor element comprises a process for etching the back of a first semiconductor layer made of one of an n-type nitride-based semiconductor layer having a wurtzite structure and a nitride-based semiconductor substrate; and a process for forming an n-side electrode on the back of the first etched semiconductor layer, thus setting the contact resistance between the first semiconductor layer and the n-type electrode to 0.05Ωcm<SP>2</SP>or smaller. COPYRIGHT: (C)2007,JPO&INPIT
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