| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method of plasma CVD deposition for preventing film formation to an circumferential portion of a top and a side portion of a wafer, and forming a film having uniform thickness and uniform characteristics. SOLUTION: A plasma CVD apparatus 1, for forming a thin film on a wafer having a diameter Dw and a thickness Tw, includes a vacuum chamber 6; a shower plate 21; and a mask 22 having an upper mask portion for covering the periphery of a top of a wafer 4, and a side mask portion for covering a side portion of the wafer 4. The side mask portion has an inner diameter of Dw+α, and the upper mask portion is disposed with a clearance of Tw+βbetween a bottom of the upper mask portion and a wafer support surface of a top plate 3. Here, bothαandβare 0 or more. COPYRIGHT: (C)2007,JPO&INPIT
|
