| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing high quality epitaxial wafer by effectively preventing heavy metal contamination in the case of manufacturing epitaxial wafer used for manufacture of an image pickup element such as CCD and CMOS image sensor using the wafer not including CVD film. SOLUTION: In the vapor phase growth apparatus as a wafer for monitoring to guarantee resistance of an epitaxial layer and/or to measure thickness of such epitaxial layer, the epitaxial wafer is manufactured with epitaxial growth for the wafer wherein a CVD film is formed at the rear surface thereof and subsequent epitaxial growth for the dummy wafer or operation of the vapor phase growth apparatus, under the condition that epitaxial growth is realized without use of the wafer, followed by the epitaxial growth for the wafer as the product. COPYRIGHT: (C)2007,JPO&INPIT
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