| 摘要 |
PROBLEM TO BE SOLVED: To sprovide a thin filmn deposition apparatus and a thin filmn deposition method capable of surely depositing a film containing an Al component. SOLUTION: The Al thin film is surely deposited by feeding an acting gas 17 containing chlorine into a chamber 1, raising the pressure in the chamber 1 to prolong the residence time, etching a member 11 made of Al to be etched by chlorine radical so as to form a precursor AlCl<SB>3</SB>comprising an Al component contained in the member 11 to be etched and halogen Cl, and depositing the Al-component of the precursor AlCl<SB>3</SB>in the form of the thin film on the substrate 3 side through intermediates of AlCl<SB>2</SB>and AlCl, being easily reduced by the chlorine radical. COPYRIGHT: (C)2007,JPO&INPIT
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