发明名称 |
Method for designing mask pattern and method for manufacturing semiconductor device |
摘要 |
A semiconductor chip is manufactured using a cell library pattern obtained by performing OPC (optical proximity correction) process at the time of a cell single arrangement to a cell library pattern which forms a basic structure of a semiconductor circuit pattern in advance. A plurality of cell libraries are arranged to design a mask pattern and a correction amount of OPC performed to the cell libraries is changed with taking into account the influence of a pattern of cell libraries arranged around a target cell. Further, a cell group with the same arrangement of surrounding cells including the target cell is extracted and is registered as a cell set, and a cell set with the same cell arrangement as that of the registered cell set is produced by copying without re-calculating OPC inside the cell set.
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申请公布号 |
US2007074146(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20060526783 |
申请日期 |
2006.09.26 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
TANAKA TOSHIHIKO;SUGA OSAMU;TERASAWA TSUNEO;HIGUCHI TETSUYA;SAKANASHI HIDENORI;NOSATO HIROKAZU;MATSUNAWA TETSUAKI |
分类号 |
G06F17/50;G03F1/36;G03F1/68;G03F1/70 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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