发明名称 Mask pattern design method and manufacturing method of semiconductor device
摘要 To a cell library pattern which makes the basic constitution of a semiconductor circuit pattern, OPC processing is performed beforehand, and a semiconductor chip is produced using this cell library pattern. Since it is influenced by the pattern of the cell arranged to the circumference and the pattern arranged around other cells at this time, correction processing (optimization processing) is performed. The part of this correction processing is a portion in which a pattern faces between cell boundaries in the inside of the region specified from the cell boundary, and proximity effect correction is performed by making the width, the length, and the position of this portion into variables. Or proximity effect correction is performed by making a polygon into a variable. Or sizing is done and proximity effect correction is performed.
申请公布号 US2007074145(A1) 申请公布日期 2007.03.29
申请号 US20060505870 申请日期 2006.08.18
申请人 RENESAS TECHNOLOGY CORP. 发明人 TANAKA TOSHIHIKO
分类号 G06F17/50;G03F1/36 主分类号 G06F17/50
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