| 摘要 |
The present invention provides an array ( 20 ) og magnetoresistive memory elements ( 10 ). The array ( 20 ) comprises: means for applying a current or voltage for generating a programming magnetic field at a selected magnetoresistive memory element ( 10 s), a magnetic field sensor unit ( 50 ) for measuring an external magnetic field in the vicinity of the selected magnetoresistive memory element ( 10 s), and means ( 52 ) for tuning the current or voltage for compensating locally for the measured external magnetic field during a programming operation. The present invention also provides a corresponding method.
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