WAVEGUIDE-INTEGRATED PHOTODIODE

摘要

The invention relates to a waveguide-integrated photodiode for high bandwidths with a semi-insulating monomode supply waveguide monolithically integrated on a substrate, together with an overlying photodiode mesa structure comprising an electroconducting n-contact layer, an absorption layer, a p+-contact layer and a metallic p-contact, the refraction index of the n-contact layer being greater than the refraction index of the semi-insulating waveguide layer. In the known photodiodes, a compromise had to be found between efficiency and bandwidth, and it was therefore necessary to seek for corresponding increases in at least one factor of the product of quantum efficiency by bandwidth. It is proposed to lengthen the n-contact layer (3) by a predetermined length L in the direction of the supply waveguide (2) in relation to the overlying layers (4, 5).