Process to manufacture e.g. a 'silicon/semiconductor on insulator' by transfer of donor substrate to mono-crystalline structure on an acceptor substrate

摘要

In a process to manufacture e.g. a 'silicon/semiconductor on insulator', donor substrate element (1) is transferred onto a layer of an essentially mono-crystalline structure (2) based on an acceptor substrate (6). An essentially mono-crystalline structure is formed. A separation layer (5) is then formed by etching the zone between the mono-crystalline structure (2) and the donor substrate (1). The lower etched surface structure (2) on the donor substrate (1) forms a bond with the acceptor substrate (6). The acceptor substrate (6) and bonded structure (2) are then separated along the do nor substrate (1) separation line (5).