| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light-emitting element provided with a positive electrode excellent in adhesiveness, having favorable translucency, having low contact resistance and excellent in current dispersion performance even if electron beam irradiation, high-temperature annealing or alloying thermal treatment in a hydrogen atmosphere is not executed. <P>SOLUTION: In a structure in which at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a metal plate are laminated in this order, a protective layer is formed so as to cover the side surface of the n-type semiconductor layer, the side surface of the light-emitting layer and the side surface of the p-type semiconductor layer, the first metal film layer to be formed so as to contact the p-type semiconductor layer is an ohmic contact layer, a second metal film layer formed so as to contact with the protective layer is configured in the order of an adhering layer and a reflection layer, and the metal plate is formed by plating so as to cover the reflection layer. By this configuration, compatibility between adhesiveness and light extracting efficiency from the side surface can be established. <P>COPYRIGHT: (C)2007,JPO&INPIT |
