| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor device for ensuring stability in device characteristics by suppressing device characteristic deterioration, with the passage of time, caused by diffusion of 1A base elements on a p/n bonding interface or p/i/n bonding interface. <P>SOLUTION: An n-type oxide layer 2, a barrier layer 3, and a p-type oxide layer 4 are laminated in order on an insulated substrate 1 such as glass, a metal electrode 5 of double-layer structure is formed on the p-type oxide layer 4, and a metal electrode 6 is formed on the n-type oxide layer 2. As an n-type oxide 2, ZnO is used and as the p-type oxide layer 4, NiO doping 1A base elements L1 is used. Furthermore, as the barrier layer 3 for suppressing the diffusion of 1A base elements, SiON is used and the deterioration of device characteristics with the passage of time can be suppressed by said barrier layer 3. <P>COPYRIGHT: (C)2007,JPO&INPIT |
