| 摘要 |
A semiconductor device containing a ruthenium diffusion barrier and a method of forming and integrating the ruthenium diffusion barrier with bulk Cu. The method includes forming the Ru diffusion barrier by depositing a first Ru layer onto a substrate in a first CVD process, modifying the first Ru layer by oxidation, or nitridation, or a combination thereof, depositing a second Ru layer on the modified first Ru layer, and plating a Cu layer onto the Ru diffusion barrier. According to one embodiment of the invention, the Ru diffusion barrier is treated and/or an ultra thin Cu layer deposited on the Ru diffusion barrier prior to Cu plating.
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