| 摘要 |
The present invention provides a method of manufacturing a semiconductor silicon substrate provided with a capacitor structure having a capacitor hole, the capacitor hole having a depth of equal to or greater than 3 mum and an aspect ratio equal to or greater than 30, the method including at least: cleaning the capacitor hole provided on the substrate to be treated in the presence of carbon dioxide in a supercritical state under conditions of a temperature ranging from 31 to 100° C. and a pressure ranging from 18 to 40 MPa; and forming a metal thin film for capacitor electrodes on the capacitor hole provided on the substrate to be treated in the presence of carbon dioxide in a supercritical state under conditions of a temperature ranging from 100 to 350° C. and a pressure ranging from 7.2 to 12 MPa.
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