发明名称 Drift compensation in a flash memory
摘要 A plurality of memory cells are managed by obtaining values of one or more environmental parameters of the cells and adjusting values of one or more reference voltages of the cells accordingly. Alternatively, a statistic of at least some of the cells, relative to a single reference parameter that corresponds to a control parameter of the cells, is measured, and the value of the reference voltage is adjusted accordingly. Examples of environmental parameters include program-erase cycle count, data retention time and temperature. Examples of reference voltages include read reference voltages and program verify reference voltages. Examples of statistics include the fraction of cells whose threshold voltages exceed initial lower bounds or initial medians.
申请公布号 US2007070696(A1) 申请公布日期 2007.03.29
申请号 US20060591641 申请日期 2006.11.02
申请人 MSYSTEMS LTD 发明人 AVRAHAM MEIR;RONEN AMIR
分类号 G11C16/06 主分类号 G11C16/06
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