| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming metal layer, utilizing an atomic layer vapor deposition, which is excellent in step coverage and allows a desired resistance and electrical conductivity to be readily determined and oxygen diffusion to be prevented, and a semiconductor element provided with a metal layer formed by the method for forming metal layer as a barrier metal layer, a lower electrode or an upper electrode of a capacitor. SOLUTION: This method for forming metal layer introduces each source gas of a reactive metal A, nitrogen N, and an element B for amorphous coupling of the reactive metal with the nitrogen alternately into a chamber to make each atomic layer alternately laminate on each other by the atomic layer vapor deposition. And this semiconductor device is provided with the metal layer formed by the method as the barrier metal layer, the lower electrode or the upper electrode of the semiconductor element. COPYRIGHT: (C)2007,JPO&INPIT
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