DEVICE FOR MULTI-ELECTRON BEAM EXPOSURE SYSTEM, AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a process for fabricating a device for multi-electron beam exposure system in which a through hole having a high aspect ratio can be formed with high precision and yield. SOLUTION: In a silicon substrate 21 having front and rear sides of ä110} crystal orientation, a parallelogrammatic through hole 23 having an aspect ratio of 4 or above is formed by anisotropic etching such that the side wall face has ä111} crystal orientation, an insulating film 22 and a resist 37 are then formed on the surface of the silicon substrate 21 and the side wall face of the through hole 23, a metal film 24a for deflecting electrode is formed on the surface opposing the side wall face of the through hole 23 by utilizing a resist pattern 38 and a metal film 25a for interconnect line extending from the metal film 24a for deflecting electrode onto the surface of the silicon substrate 21 is formed, and after removing the resist pattern 38, a deflecting electrode 24 and an interconnect line 25 are formed by plating metal films 24b and 25b on the metal film 24a for deflecting electrode and the metal film 25a for interconnect line. COPYRIGHT: (C)2007,JPO&INPIT