| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser crystallization method employing a YAG2ωlaser that can suppress anisotropy of TFT characteristics, even if anisotropy occurs in crystal grain shape due to the polarization direction of a laser light. SOLUTION: A linearly polarized beam light 13 is applied to an amorphous Si film 11 for laser annealing to form a polycrystal Si film 12. In this case, the direction of the linearly polarized light is inclined by 45°against the scanning direction 21. The crystal grain size of the polycrystal Si film 12 is made nearly identical in the scanning direction 21 and in the vertical direction to the scanning direction. Therefore, on case when the polycrystal Si film 12 is used to form a TFT, a difference in mobility can be suppressed between a TFT having a channel in the scanning direction 21 and that having a channel in the vertical direction to the scanning direction 21. COPYRIGHT: (C)2007,JPO&INPIT
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