发明名称 |
Methods for programming flash memory devices using variable initial program loops and related devices |
摘要 |
A method of programming a nonvolatile memory device including a plurality of memory cells includes providing a plurality of program loops having a corresponding plurality of program voltages associated therewith. A first one of the plurality of program loops is activated to generate a first program voltage to program a first one of the plurality of memory cells. A second one of the plurality of program loops is activated to generate a second program voltage to program a second one of the plurality of memory cells. Related devices are also discussed.
|
申请公布号 |
US2007074194(A1) |
申请公布日期 |
2007.03.29 |
申请号 |
US20060439797 |
申请日期 |
2006.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAHN WOOK-GHEE;LIM YOUNG-HO;BYEON DAE-SEOK |
分类号 |
G06F9/45 |
主分类号 |
G06F9/45 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|